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| inchange semiconductor isc product specification isc silicon npn power transistor 2SC4327 description collector-emitter breakdown voltage- : v (br)ceo = 35v(min) low collector saturation voltage- : v ce(sat) = 0.5v(max)@ (i c = 5a, i b = 0.3a) b complement to type 2sa1643 applications designed for power switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 50 v v ceo collector-emitter voltage 35 v v ebo emitter-base voltage 7 v i c collector current-continuous 7 a p c collector power dissipation @t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4327 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma; i b = 0 35 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 5a; i b = 0.3a b 0.5 v v be (sat) base-emitter saturation voltage i c = 5a; i b = 0.3a b 1.2 v i cbo collector cutoff current v cb = 50v; i e = 0 10 a i ebo emitter cutoff current v eb = 7v; i c = 0 10 a h fe dc current gain i c = 5a; v ce = 2v 50 f t current-gain?bandwidth product i e = -1a; v ce = 12v 115 mhz isc website www.iscsemi.cn 2 |
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